This document describes the features and characteristics of ROHM's EMB11 / UMB11N / IMB11A PNP -100mA -50V complex digital transistors (bias resistor built-in transistors). It has built-in biasing resistors, allowing the configuration of an inverter circuit without connecting external input resistors. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing and eliminate parasitic effects. Only the on/off conditions need to be set for operation, making the circuit design easy.
The ROHM EMB11, UMB11N and IMB11A are PNP transistors featuring built‑in 10 kΩ bias resistors, allowing inverter or driver circuits without external resistors. They are supplied in compact SOT‑353 (EMB11/UMB11N) and SOT‑457 (IMB11A) packages and are RoHS compliant.
The document provides absolute maximum ratings, electrical characteristics, typical characteristic curves, and detailed mechanical dimensions for each package variant. It also includes packaging specifications, application notes, and legal notices regarding use and export.
| Supply voltage (VEO) | —50 V |
|---|---|
| Input voltage (VIN) | —40 to +10 V |
| Output current (IO) | 50 mA |
| Collector current (ICmax) | —100 mA |
| Power dissipation (EMB11/UMB11N) | 150 mW |
| Power dissipation (IMB11A) | 300 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | —55 °C to +150 °C |
| Package (EMB11/UMB11N) | SOT‑353 (SC‑88) |
| Package (IMB11A) | SOT‑457 (SC‑74) |
The maximum supply voltage is —50 V.
EMB11 and UMB11N can dissipate up to 150 mW, while IMB11A can dissipate up to 300 mW.