This datasheet provides detailed information about the EMH6/UMH6N/IMH6A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors), including its features, specifications, applications and other information.
The EMH6, UMH6N and IMH6A are NPN transistors with built‑in 47 kΩ bias resistors, offered in compact SOT‑353 (EMH6, UMH6N) and SOT‑457 (IMH6A) packages. They are designed for inverter, interface and driver circuits, providing easy circuit design without external bias components.
The datasheet lists absolute maximum ratings, electrical characteristics, and mechanical dimensions for each part. It also includes application notes, packaging details, and a notice on usage restrictions and compliance.
| Supply voltage (VCC) | 50 V |
|---|---|
| Input voltage range | -10 V to +40 V |
| Output current (typical) | 30 mA |
| Collector current (max) | 100 mA |
| Power dissipation (EMH6/UMH6N) | 150 mW |
| Power dissipation (IMH6A) | 300 mW |
| Junction temperature (max) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Built‑in bias resistor value | 47 kΩ |
The maximum supply voltage is 50 V.
Each device includes built‑in bias resistors of 47 kΩ.
The typical output current is 30 mA.