This datasheet provides detailed information on the features and characteristics of EMB3 / UMB3N / IMB3A, including packaging, pin definitions, and specifications.
The EMB3, UMB3N, and IMB3A are PNP -100 mA -50 V complex digital transistors with built‑in bias resistors, allowing inverter circuits without external resistors. They feature thin‑film bias resistors with complete isolation and are lead‑free/RoHS compliant.
Key specifications include a collector‑base voltage of 50 V, a maximum collector current of 100 mA, and a junction temperature rating of 150 °C. The devices are offered in SOT‑353 (EMB3) and SOT‑457 (UMB3N, IMB3A) packages, with detailed dimensions and packaging data provided for PCB layout. Typical applications are inverter, interface, and driver circuits.
| Collector‑base voltage | 50 V |
|---|---|
| Maximum collector current | 100 mA |
| Junction temperature | 150 °C |
| Storage temperature range | -55 to +150 °C |
| RoHS compliance | Lead Free/RoHS Compliant |
The maximum collector current is 100 mA.
Yes, they are lead‑free and RoHS compliant.
EMB3 is supplied in an SOT‑353 (SC‑88) package, while UMB3N and IMB3A use SOT‑457 (SC‑74) packages.
They are intended for inverter circuits, interface circuits, and driver circuits.