This document is about EMH3 / UMH3N / IMH3A NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
The EMH3, UMH3N, and IMH3A are complex digital transistors with built‑in bias resistors, allowing inverter or driver circuits without external resistors. They are offered in SOT‑353, SOT‑457, and SMT6 packages and are lead‑free/RoHS compliant.
The datasheet lists absolute maximum ratings such as 50 V collector‑emitter voltage and 100 mA collector current, as well as electrical characteristics like input resistance (3.5‑5.9 kΩ) and transition frequency up to 250 MHz. Detailed mechanical dimensions for each package are also provided.
| Collector‑emitter voltage (Vceo) | 50 V |
|---|---|
| Collector‑base voltage (Vego) | 50 V |
| Emitter‑base voltage (Vebo) | 5 V |
| Maximum collector current | 100 mA |
| Power dissipation (EMH3/UMH3N) | 150 mW |
| Power dissipation (IMH3A) | 300 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Input resistance | 3.5 kΩ – 5.9 kΩ |
| Transition frequency (f_T) | 250 MHz |
| RoHS compliance | Lead Free/RoHS Compliant |
The maximum collector‑emitter voltage is 50 V.
EMH3 uses a SOT‑353 (SC‑88) package, UMH3N uses a SOT‑457 (SC‑74) package, and IMH3A uses an SMT6 package.
Yes, they are lead‑free and RoHS compliant.
The IMH3A can dissipate up to 300 mW total.