Rohm IMH23 Dual Digital Transistor Datasheet

IMH23 is a dual digital transistor with low saturation voltage, high current output and SMT package.


Rohm IMH23 Dual Digital Transistor Datasheet - cover page
Brand
ROHM
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
60 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
C27AD995106E17F1ED451EB2D75802BA

About this manual

The IMH23 is a dual digital NPN transistor with built‑in resistor type. It offers a low saturation voltage of 40 mV at IC/IB = 50 mA/2.5 mA and can handle collector currents up to 600 mA. The device is supplied in an SMT6 surface‑mount package and includes two DTC643T chips.

The datasheet lists absolute maximum ratings such as a 300 V collector‑emitter voltage and 200 mW power dissipation per element. Detailed electrical characteristics, equivalent circuit, and packaging specifications are provided, along with characteristic curves for hFE, VCE(sat), and on‑resistance.

What's inside

  • Features
  • Structure
  • External dimensions
  • Equivalent circuit
  • Absolute maximum ratings
  • Electrical characteristics
  • Packaging specifications
  • Characteristic curves
  • Appendix

Specifications

Typical saturation voltage VCE(sat)40 mV at IC/IB = 50 mA/2.5 mA
Maximum collector current IC600 mA
Collector‑emitter voltage VCEO300 V
Power dissipation per element200 mW
Current gain hFE (typical)1500 at 5 V/50 mA

Frequently asked questions

What is the typical saturation voltage of the IMH23 transistor?

Typical VCE(sat) is 40 mV at a collector/current ratio of 50 mA/2.5 mA.

What is the maximum collector current rating?

The IMH23 can handle up to 600 mA of collector current.

What is the maximum collector‑emitter voltage?

The device is rated for a collector‑emitter voltage of 300 V.

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