This product is a bidirectional optocoupler with high current transfer ratio, low CTR degradation, good CTR linearity, 5300VRMS isolation test voltage and other features.
This document provides a datasheet for the Siemens SFH620AA/AGB optocoupler. The device features a GaAs infrared emitting diode coupled to a silicon planar phototransistor detector within a plastic DIP-4 package. It is designed for signal transmission between electrically separated circuits and offers high current transfer ratios with low coupling capacitance.
| Emitter Reverse Voltage | -60 mA Surge Forward Current (t P £ 10 m s) |
|---|---|
| Total Power Dissipation | 100 mW |
| Detector Collector-Emitter Voltage | 70 V |
| Collector Current | 50 mA |
| Total Power Dissipation (Detector) | 150 mW |
| Isolation Test Voltage | 5300 VAC RMS |
| Storage Temperature Range | -55 to +150 ° C |
| Ambient Temperature Range | -55 to +100 ° C |
| Junction Temperature | 100 ° C |
| Soldering Temperature (max. 10 s) | 260 ° C |
| Current Transfer Ratio at 5 mA | 50–600% |
| Current Transfer Ratio at 1 mA | 45% typical (>13) |
| Collector-Emitter Saturation Voltage (AA) | 0.25 V ( £ 0.4 V) |
| Turn-on Time | 2.0 m s |
| Turn-off Time | 25 m s |
The device can be stored in a temperature range of –55 to +150 ° C.
The isolation test voltage is 5300 VAC RMS, compliant with Climate DIN 40046.
The typical current transfer ratio at 1 mA is 45%.