BSS 80 BSS 82 are PNP type bipolar junction transistors. They feature high current gain, low collector-emitter saturation voltage, low saturation current and good thermal stability. They are ideal for low voltage, high power switching circuits.
This document provides technical specifications for the Siemens BSS 80 and BSS 82 series of PNP silicon switching transistors. It includes ordering codes, pin configurations, and maximum ratings such as collector-emitter voltage and total power dissipation.
The datasheet details DC and AC electrical characteristics including current gain, breakdown voltages, saturation voltages, transition frequency, and timing parameters like delay and rise times under specific test conditions.
| Collector-emitter voltage (Vceo) | 40 V (BSS 80), 60 V (BSS 82) |
|---|---|
| Collector current (Ic) | 800 mA |
| Total power dissipation (Prot) | 330 mW |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (ft) | 250 MHz |
The complementary types are BSS 79 and BSS 81 (NPN).
The storage temperature range is from -65 to +150 °C.
The maximum base current Is is 100 mA.