Siemens BUZ 101 SL Power Transistor Datasheet

This product is a N-channel enhanced logic level SIPMOS power transistor, with a maximum voltage of 55V, a maximum current of 20A, a switching loss of 0.07 ohm, and a TO-220AB package.


Siemens BUZ 101 SL Power Transistor Datasheet - cover page
Brand
Siemens
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
96 KB
Published
04 June, 2012
Updated
30 September, 2023
MD5 checksum
FFECC311580E9049667C2659968AA906

About this manual

The BUZ 101 SL is an N‑channel, enhancement‑mode, logic‑level SIPMOS power transistor designed for high‑current applications. It offers an avalanche‑rated structure and operates up to 175 °C.

Key specifications include a continuous drain current of 20 A at 25 °C, a drain‑source breakdown voltage of 55 V, and typical on‑resistance of 0.034 Ω. Thermal resistance values are 27 K/W (junction‑case) and 62 K/W (junction‑ambient), and the device features input and output capacitances of 120 pF and 215 pF respectively.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Static Characteristics
  • Dynamic Characteristics
  • Reverse Diode
  • Power Dissipation
  • Safe Operating Area
  • Typical Output Characteristics
  • Typical Transfer Characteristics
  • Typical Capacitances

Specifications

Continuous drain current (Id) at 100 °C14 A
Operating temperature range-55 °C to +175 °C
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