Si4850EY is a low Qg, fast switching N-channel MOSFET. This device is typically used in DC/DC converters, inverters and motor drives.
The Si4850EY is a N‑Channel MOSFET with reduced gate charge and fast switching performance, offered in SO‑8 package options such as E3, T1, and T1‑E8. It is intended for surface‑mount applications on standard FR‑4 boards.
Key specifications include a 60 V drain‑source rating, ±20 V gate‑source rating, continuous drain current up to 7 A at 70 °C, typical on‑resistance of 0.025 Ω, and a total gate charge of 18 nC. Thermal resistance values and transient impedance curves are also provided for design reference.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) @ 70 °C | 7 A |
| Total Gate Charge (Qg) typical | 18 nC |
| Junction‑to‑Ambient Thermal Resistance (RθJA) typical | 75 °C/W |
The Si4850EY is rated for a maximum drain‑source voltage of 60 V.
It can conduct up to 7 A continuously at a case temperature of 70 °C.