T1090P is a high-sensitivity silicon NPN phototransistor from Vishay, sensitive to visible and near-infrared light.
The T1090P is a silicon NPN phototransistor chip with high radiant sensitivity, suitable for visible and near‑infrared radiation. It offers high photo sensitivity, fast response times, and complies with RoHS and WEEE directives. The device is supplied in a chip package measuring 0.53 × 0.53 × 0.185 mm.
Typical applications include detectors in electronic control and drive circuits. The datasheet also details ordering information, absolute maximum ratings, basic electrical characteristics, mechanical dimensions, and recommended handling and storage procedures.
| Package type | chip |
|---|---|
| Dimensions (L × W × H) | 0.53 × 0.53 × 0.185 mm |
| Collector current (IC) | 50 mA |
| Peak wavelength (λp) | 825 nm |
| Spectral bandwidth (λ0.1) | 440 to 1070 nm |
| Maximum junction temperature (Tj) | 100 °C |
| Operating temperature range (Tamb) | -40 °C to +100 °C |
It can operate from –40 °C up to +100 °C.
The peak wavelength sensitivity is 825 nm.