Si1013R/X is a P-Channel 1.8-V (G-S) MOSFET from Vishay Siliconix. It features high-side switching, low on-resistance, low threshold, fast switching speed, 1.8-V operation, gate-source ESD protection, ease in driving switches, low offset (error) voltage, low-voltage operation, high-speed circuits, low battery voltage operation, drivers: relays, solenoids, lamps, hammers, displays, memories, battery operated systems, power supply converter circuits, load/power switching cell phones, pagers.
The ZSiSC-7A is a P‑channel MOSFET designed for high‑side switching, low‑voltage operation and fast switching speeds. It features low on‑resistance, low threshold voltage, and built‑in gate‑source ESD protection, making it suitable for battery‑operated systems, power‑supply converters, and load switching in portable devices.
Key specifications include a -20 V drain‑source voltage rating, +6 V gate‑source rating, typical on‑resistance of 1.2 Ω, and a gate‑threshold voltage of 0.45 V. The device is offered in SC‑75A (SOT‑416) and SC‑89 (SOT‑490) packages.
| Drain‑Source Voltage (VDS) | -20 V |
|---|---|
| Gate‑Source Voltage (VGS) | +6 V |
The MOSFET is rated for a maximum drain‑source voltage of -20 V.
It is used in drivers for relays, solenoids, lamps, hammers, displays, memories, battery‑operated systems, power‑supply converters, and load/power switching in cell phones and pagers.