The TCDT1100(G) series is an optocoupler consisting of a phototransistor and a gallium arsenide infrared-emitting diode. The product is packaged in a 6-lead plastic dual inline package and uses a coplanar technique to mount the elements on one leadframe, providing a fixed distance between input and output for highest safety requirements.
The TCDT1100(G) Series optocouplers consist of a phototransistor optically coupled to a gallium arsenide infrared‑emitting diode in a 6‑lead plastic DIP package. They are designed for reinforced isolation in safety class II applications, supporting mains voltages up to 600 V and complying with VDE 0884 and other safety standards.
The datasheet details electrical characteristics such as forward voltage, current transfer ratio, and isolation ratings, as well as switching times, typical performance curves, and mechanical dimensions. It also includes safety ratings, approval markings, and recommended operating conditions for reliable use in power supplies, line receivers, and microprocessor interfaces.
| Rated isolation voltage (RMS) | 600 V RMS (848 V peak) |
|---|---|
| Rated impulse voltage | 6 kV peak |
| Current Transfer Ratio (CTR) | 0.40 (40 %) |
| Forward voltage (typical) | 1.25 V |
| Forward current | 60 mA |
The device is rated for 600 V RMS isolation (848 V peak).
The typical CTR is 0.40, or 40 %.
The maximum impulse voltage rating is 6 kV peak.