The data table mainly introduces the Si1553DL Vishay Siliconix product specifications, including rated maximum voltage, current, power and other parameters.
The Si1553DL is a complementary N‑channel and P‑channel MOSFET offered in a 6‑lead SOT‑363 (SC‑70) surface‑mount package. It is designed for low‑voltage applications with a 2.5‑V gate‑source drive.
Key specifications include a maximum drain‑source voltage of 20 V (N‑channel) / –20 V (P‑channel), on‑state resistance of 0.63 Ω (N) and 1.80 Ω (P) at VGS=2.5 V, continuous drain current up to 0.385 A, and operation over a temperature range of –55 °C to 150 °C.
| Drain‑Source Voltage (VDS) | 20 V (N‑channel) / –20 V (P‑channel) |
|---|---|
| On‑State Resistance (rDS(on)) at VGS=2.5 V | 0.63 Ω (N‑channel) / 1.80 Ω (P‑channel) |
| Maximum Power Dissipation | 0.16 W |
| Operating Junction Temperature Range | -55 °C to 150 °C |
| Thermal Resistance Junction‑to‑Ambient (RthJA) | 400 °C/W |
The device is rated for 20 V on the N‑channel and –20 V on the P‑channel.
It is supplied in a SOT‑363 (SC‑70) 6‑lead surface‑mount package.
0.63 Ω for the N‑channel and 1.80 Ω for the P‑channel.
The continuous drain current is 0.385 A (N‑channel) at 150 °C.