STMicroelectronics STL8NH3LL N-Channel MOSFET Datasheet

STL8NH3LL is an N-channel 30 V - 0.012 Ω - 8 A PowerFLAT™ Ultra Low Gate Charge STripFET™ MOSFET from STMicroelectronics. The device is optimized for low on-resistance and minimal gate charge, and it has an improved DIE-TO-FOOTPRINT ratio, a very low profile package (1mm MAX), very low thermal resistance, very low gate charge, and a low threshold.


STMicroelectronics STL8NH3LL N-Channel MOSFET Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
165 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
361CAE09AA58E5D333CC75AAE67A3FDC

About this manual

The STL8NH3LL is an N‑channel MOSFET featuring a 30 V drain‑source rating, ultra‑low gate charge, and a very low on‑resistance of 0.012 Ω typical. It is packaged in ST's PowerFLAT™ chip‑scale 3.3 × 3.3 mm package, offering a high density footprint and low thermal resistance.

The document provides absolute maximum ratings, thermal data, electrical characteristics, switching performance, mechanical dimensions, and revision history. It is intended for designers of buck converters and other power‑management circuits.

What's inside

  • General Features
  • Absolute Maximum Ratings
  • Thermal Data
  • Electrical Characteristics
  • Switching On
  • Switching
  • Source Drain Diode
  • Mechanical Data
  • Revision History

Specifications

Drain‑Source Voltage (VDS)30 V
On‑Resistance (RDS(on))0.012 Ω typical
Gate Charge (Qg)12 nC typical

Frequently asked questions

What is the maximum drain‑source voltage of the STL8NH3LL?

The maximum drain‑source voltage is 30 V.

What is the typical on‑resistance of this MOSFET?

The typical on‑resistance is 0.012 Ω.

What is the typical gate charge of the device?

The typical total gate charge is about 12 nC.

Download PDF (165 KB)

More STMicroelectronics Manuals


View all STMicroelectronics manuals →