STW6NA80 STH6NA80FI N-CHANNEL 800V-1.8-5.4A-TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR is a product of STMicroelectronics. It uses AVALANCE RUGGED TECHNOLOGY and has the characteristics of 100% AVALANCHE TESTED, REPETITIVE AVALANCHE DATA AT 100oC, LOW GATE CHARGE, VERY HIGH CURRENT CAPABILITY. It is mainly used in HIGH CURRENT, HIGH SPEED SWITCHING, SOLENOID AND RELAY DRIVERS, REGULATORS, DC-DC & DC-AC CONVERTERS, MOTOR CONTROL, AUDIO AMPLIFIERS, AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.).
The STW6NA80 and STH6NA80FI are 800 V avalanche‑rated MOSFETs designed for high‑current, high‑speed switching applications such as solenoid drivers, regulators, DC‑DC converters, motor control and automotive systems. They feature low gate charge, high current capability and robust avalanche performance.
Key specifications include a maximum drain‑source voltage of 800 V, continuous drain currents of 5.4 A (STW6NA80) and 3.4 A (STH6NA80FI) at 25 °C, total power dissipation up to 150 W, and thermal resistance junction‑case as low as 0.83 °C/W. Detailed electrical, thermal, and mechanical data are provided for design and reliability analysis.
| Maximum Drain‑Source Voltage (VDS) | 800 V |
|---|---|
| Continuous Drain Current (25 °C) | 5.4 A (STW6NA80) / 3.4 A (STH6NA80FI) |
| Total Power Dissipation (25 °C) | 150 W (STW6NA80) / 60 W (STH6NA80FI) |
| Thermal Resistance Junction‑Case | 0.83 °C/W (STW6NA80) / 2.08 °C/W (STH6NA80FI) |
| Avalanche Current (repetitive) | 5.4 A (STW6NA80) / 3.4 A (STH6NA80FI) |
Both devices are rated for a maximum drain‑source voltage of 800 V.
The repetitive avalanche current is specified as 5.4 A for the STW6NA80 and 3.4 A for the STH6NA80FI.