This is a STS7PF30L P-CHANNEL 30V - 0.016Ω - 7A SO-8 STripFET™ II POWER MOSFET from ST Microelectronics. It has low RDS(on) and extremely high packing density, and is suitable for applications such as battery management and power management.
The STS7PF30L is a P‑channel power MOSFET developed with STMicroelectronics' Single Feature Size strip‑based process, offering low on‑resistance, high current capability and robust avalanche performance. It is intended for battery management in portable equipment and power management in cellular phones.
Key specifications include a 30 V drain‑source rating, 7 A continuous drain current at 25 °C, typical Rds(on) of 0.016 Ω, 50 °C/W thermal resistance (junction‑ambient) and a compact SO‑8 package with detailed mechanical dimensions.
| Drain‑Source Voltage (Vds) | 30 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Id) @ 25 °C | 7 A |
| Continuous Drain Current (Id) @ 100 °C | 4.4 A |
| Pulsed Drain Current | 28 A |
| Total Power Dissipation | 2.5 W |
| Typical On‑Resistance (Rds(on)) | 0.016 Ω |
| Thermal Resistance (J‑A) | 50 °C/W |
| Storage Temperature Range | -55 °C to 150 °C |
| Package Dimension A (length) | 1.75 mm |
The maximum drain‑source voltage is 30 V.
The typical on‑resistance is 0.016 Ω.
The device can handle a pulsed drain current of up to 28 A.
The junction‑to‑ambient thermal resistance is specified as 50 °C/W.