2SD1775, 2SD1775A are silicon NPN triple diffusion planar type power transistors, with the features of high speed switching and high current amplification ratio.
The 2SD1775 and 2SD1775A are silicon NPN triple‑diffusion planar power transistors designed for high‑speed switching and high current amplification. They are supplied in an N‑type package that allows direct soldering of a heat‑sink fin to a PCB for compact electronic equipment.
Key specifications include a collector‑to‑emitter voltage rating up to 80 V (2SD1775) or 100 V (2SD1775A), a peak collector current of 4 A, a transition frequency around 40 MHz, and a maximum power dissipation of about 13 W. Thermal management options such as various aluminum heat‑sink dimensions are detailed, along with safe operating area curves for different ambient temperatures.
| Peak Collector Current | 4 A |
|---|---|
| Junction Temperature (Tj) max | 150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| Forward Current Transfer Ratio (hFE) typical | 500‑1000 |
The peak collector current is specified as 4 A.