BSM 50 GAL 120 DN2 is an IGBT module from Infineon Technologies with a maximum collector-emitter voltage of 1200V and a maximum collector current of 50A.
The BSM 50 GAL 120 DN2 is a single‑switch IGBT power module with an integrated chopper diode. It is supplied in a half‑bridge package with an insulated metal base plate and is rated for 1200 V collector‑emitter voltage and 78 A continuous collector current.
The datasheet lists detailed static, AC, and switching characteristics, including gate threshold voltage, capacitances, turn‑on/off times, and diode parameters, as well as mechanical data such as package outline, weight (250 g), and thermal resistance values.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Thermal resistance, chip‑case | <0.3 K/W |
| Package weight | 250 g |
The module is rated for a maximum collector‑emitter voltage of 1200 V.
The thermal resistance is less than 0.3 K/W.