This document describes an infrared light emitting diode product with features such as high-power output, high efficiency, long lifetime, and high reliability. The product is suitable for optical control systems and has an emitted light spectrum suited for silicon photodetectors.
The LNA2802L is a GaAs infrared light‑emitting diode designed for optical control systems. It offers high‑power output (5 mW typical) and a peak wavelength of 940 nm, making it suitable for silicon photodetector applications.
The datasheet lists absolute maximum ratings, such as 50 mA forward current (DC) and 1 A pulse current, and operating temperature ranges from –25 °C to +85 °C. Safety notes warn that the GaAs material is hazardous if burned or crushed and must be disposed of according to regulations.
| Typical radiant power | 5 mW |
|---|---|
| Peak emission wavelength | 940 nm |
| Spectral half‑band width | 50 nm |
| Forward voltage (DC) | 1.3‑1.5 V |
| Reverse voltage (DC) | 3 V |
| Forward current (DC) max | 50 mA |
| Pulse forward current max | 1 A |
| Operating ambient temperature | –25 °C to +85 °C |
| Storage temperature | –40 °C to +100 °C |
The typical radiant power is 5 mW.
It emits at a peak wavelength of 940 nm.
The device can handle up to 50 mA DC forward current and 1 A pulse forward current.