This document describes the power MOSFETs of the N-Channel Enhancement Mode Avalanche Rated, High dv/dt model produced by IXYS. The product features low on-resistance, strong voltage resistance, and can be used for switching inductive loads.
The IXFH80N085 and IXFT80N085 are N‑channel enhancement mode power MOSFETs offered by IXYS. They feature low on‑resistance, high dv/dt capability, and UL‑94 V‑0 compliant packaging for reliable high‑power applications.
The data sheet lists maximum ratings such as 85 V drain‑source voltage and 80 A continuous drain current, test conditions, characteristic curves, and detailed mechanical dimensions for the TO‑247 AD (IXFH) and TO‑268 (IXFT) packages. This manual is written in Chinese.
| Maximum Drain‑Source Voltage (VDSS) | 85 V |
|---|---|
| Continuous Drain Current (ID) | 80 A |
| On‑Resistance (RDS(on)) | 9 mΩ |
| Gate Charge (Qg(on)) | 180 nC |
| Package Type | TO‑247 AD (IXFH) / TO‑268 (IXFT) |
The maximum drain‑source voltage is 85 V.
They are rated for a continuous drain current of 80 A.
The typical on‑resistance is 9 mΩ.