MX29L1611 is a 16MB pagemode flash memory from MXIC. It has a regulated voltage range of 3.0 to 3.6V for write, erase and read, and supports fast random access and page mode access. It has a 10000 cycle endurance, a page access depth of 16 bytes/8 words, and supports 32 equal sectors of 64k bytes each. Each sector's erase time is 200ms typical. It supports auto erase and auto program algorithms, which can automatically erase any one of the sectors or the whole chip with erase suspend capability. It can also automatically program and verify data at specified addresses. It has a status register feature for detection of program or erase cycle completion, and supports low VCC write inhibit and software and hardware data protection. Page program operation has internal address and data latches for 128 bytes/64 words per page, and the page programming time is 5ms typical. It has low power dissipation, with an active current of 50mA and a standby current of 20uA. It also has two independently protected sectors, and is packaged in 44-lead SOP and 48-lead TSOP.
The MX29L1611 is a 16‑megabit page‑mode flash memory offered by Macronix. It is available in 44‑pin SOP and 48‑pin TSOP packages and can be programmed and erased in‑system using standard micro‑processor bus cycles. The device supports both 8‑bit (2M × 8) and 16‑bit (1M × 16) organizations and provides fast random and page‑mode access times.
Key features include a regulated voltage range of 3.0 V to 3.6 V (2.7 V to 3.6 V for some versions), 10 000‑cycle endurance, 32 × 64 KB sectors, low power consumption (50 mA active, 20 µA standby) and built‑in auto‑erase/program algorithms. Detailed pin configurations, bus operation tables and command definitions are provided for designers.
| Voltage range (write/erase/read) | 3.0 V to 3.6 V |
|---|---|
| Full voltage range (alternative version) | 2.7 V to 3.6 V |
| Endurance | 10,000 cycles |
| Page access depth | 16 bytes / 8 words |
| Sector organization | 32 sectors of 64 KB each |
| Active current | 50 mA |
| Standby current | 20 µA |
| Package types | 44‑lead SOP, 48‑lead TSOP |
| Fast random access time | 75 ns / 30 ns (typical) |
The device operates with a regulated voltage of 3.0 V to 3.6 V for write, erase and read operations, and a full range of 2.7 V to 3.6 V for some versions.
It contains 32 equal sectors, each 64 KB (65,536 bytes) in size.
The flash memory is rated for 10,000 program/erase cycles.
The device is offered in a 44‑lead SOP package and a 48‑lead TSOP package.