MX29F400T/B is a 4M-bit CMOS FLASH memory with 512Kx8/256Kx16 bit organization. It provides a fast access time of 55/70/90/120ns, and low power consumption of 40mA maximum active current(5MHz) and 1uA typical standby current. The Ready/Busy pin provides a hardware method of detecting program or erase cycle completion. It also supports sector protection and 100,000 minimum erase/program cycles.
The document describes the MX29F400T/B, a 4-megabit Flash memory organized as 512K bytes of 8 bits or 256K words of 16 bits. It is designed for reprogramming and erasing in-system or via standard EPROM programmers and offers fast access times starting at 55ns.
Key features include single power supply operation (5.0V), low power consumption with a typical standby current of 1uA, and advanced command register architecture supporting Byte Address Programming and Sector Erase. The device incorporates Auto Erase and Auto Program capabilities to simplify system design.
| Memory Organization | 512K x 8 / 256K x 16 |
|---|---|
| Access Time | 55ns / 70ns / 90ns / 120ns |
| Maximum Active Current | 40mA (6MHz) |
| Typical Standby Current | 1uA |
| Operating Voltage | 5.0V only |
| Erase/Program Cycles | 100,000 minimum |
| Data Retention | 20 years |
The typical standby current is 1uA.
Yes, it is designed to be reprogrammed and erased in system or in standard EPROM programmers.