This datasheet describes Toshiba's 015AZ series silicon epitaxial planar Zener diodes covering nominal voltages from 2.0 V to 12 V. It includes package information, marking examples, and pin assignment for the small 0.6 mm package.
Detailed electrical characteristics are given, including maximum power dissipation, junction temperature limits, storage temperature range, Zener dynamic and knee dynamic parameters, as well as forward current and voltage curves.
| Maximum Power Dissipation | 200 mW |
|---|---|
| Maximum Junction Temperature | 125 °C |
| Storage Temperature Range | -55~125 °C |
| Package Size | 0.6 mm (small package) |
| Pad Dimension | 4 x 4 mm |
The device can dissipate up to 200 mW.
It can be stored from –55 °C to 125 °C.