ST93CS66 ST93CS67 4K (256 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN
The ST93CS66 and ST93CS67 are 4‑Kbit (256 × 16) serial Microwire EEPROMs fabricated with SGS‑THOMSON high‑endurance CMOS technology. They provide non‑volatile storage with up to 1 million erase/write cycles and a data‑retention period of 40 years. The devices operate from a single supply voltage (3 V‑5.5 V for ST93CS66, 2.5 V‑5.5 V for ST93CS67) and feature self‑timed programming cycles.
Key features include a ready/busy status signal, page‑write capability (up to 4 words per cycle), user‑defined write‑protected area, and an OTP bit for permanent protection. The datasheet details absolute maximum ratings, electrical characteristics, timing diagrams, instruction set, and power‑on data protection procedures.
| Memory size | 4 Kbit (256 × 16) |
|---|---|
| Erase/Write cycles | 1 million |
| Data retention | 40 years |
| Typical programming time | 5 ms |
| Supply voltage (ST93CS67) | 2.5 V to 5.5 V |
| Ambient operating temperature | -40 °C to 85 °C |
| Storage temperature | -65 °C to 150 °C |
The devices are rated for up to 1 million erase/write cycles.
Programming typically takes about 5 ms per cycle.
Data retention is specified for 40 years.