SGS-THOMSON MJ802/MJ4502 Complementary High Power Transistors Datasheet

Brand: SGS-THOMSON
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 5
File format: PDF
File size: 279 KB
Published: 05 June, 2012
Updated: 05 June, 2012
MD5 checksum: 7393BEEBA03ECDBA4FED63CECADB59EF
PDF: SGS-THOMSON MJ802/MJ4502 Complementary High Power Transistors Datasheet PDF

About this manual

This document provides technical specifications for the SGS-THOMSON MJ802 (NPN) and MJ4502 (PNP), which are silicon epitaxial-base complementary power transistors housed in JEDEC TO-3 metal cases. These devices are intended for general-purpose power amplifier and switching applications.

What's inside

Description
Absolute Maximum Ratings
Thermal Data
Electrical Characteristics
DC Current Gain
Saturation Voltage
Transition Frequency
Capacitances
Turn-on Time
Turn-off Time

Specifications

Collector-emitter Voltage (Ig = 0)	90 V
Collector Current	30 A
Total Power Dissipation at Tcase ≤ 25°C	200 W
Thermal Resistance Junction-case Max	0.875 °C/W

Frequently asked questions

What are the absolute maximum collector-emitter and collector-base voltages for these transistors?

The maximum collector-emitter voltage is 90 V, and the maximum collector-base voltage is 100 V.

What is the maximum total power dissipation at a case temperature of 25°C?

The maximum total power dissipation is 200 W when the case temperature is 25°C.

What are the minimum and maximum DC current gain values for these transistors?

The DC current gain ranges from a minimum of 25 to a maximum of 100.

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