International Rectifier's R5TM technology provides high-performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling, and temperature stability.
The IRHMS57Z60 is a radiation‑hardened, low‑ohmic, N‑channel power MOSFET designed for space and high‑reliability applications. It features a 30 V drain‑to‑source breakdown voltage, low on‑resistance (0.0045 Ω), and a typical continuous drain current of 45 A.
The document provides pre‑ and post‑irradiation electrical characteristics, thermal resistance data, switching test results, package dimensions, and safety warnings for handling beryllium‑containing packages.
| Drain‑to‑Source Breakdown Voltage (BVdss) | 30 V |
|---|---|
| Continuous Drain Current (ID) @ VGS=12 V, Tj=25 °C | 45 A |
| Pulsed Drain Current (IDM) | 180 A |
| Total Gate Charge (Qg) | 240 nC |
| Junction Temperature Range (TJ) | -55 °C to 150 °C |
| Package Weight | 9.3 g (typical) |
The device can handle a continuous drain current of 45 A at VGS = 12 V and a junction temperature of 25 °C.
Beryllia packages must not be ground, sandblasted, machined, or exposed to processes that generate beryllium dust, and must not be placed in acids that produce beryllium fumes.