Update: 28 September, 2023
International Rectifier's R5TM technology provides high-performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling, and temperature stability.
File format: PDF
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MD5 Checksum: 091D98259ECAE442DC34CCD2C9589818
Publication date: 09 May, 2012
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PDF Link: lnternational IOR Rectifier IRHMS57Z60 handbook PDF