This document introduces International Rectifier's (IR) RAD-HardTM HEXFET® MOSFET technology, which provides high-performance power MOSFETs for space applications. These devices have low Rdson and low gate charge, reducing power losses in switching applications. Additionally, they retain all the advantages of MOSFETs, such as voltage control, fast switching, ease of paralleling, and temperature stability of electrical parameters.
The IRHE9130 is a radiation‑hardened, surface‑mount P‑channel power MOSFET designed for space and high‑reliability applications. It offers low on‑resistance, low gate charge, and robust performance under total ionizing dose and single‑event effects.
The handbook details absolute maximum ratings, pre‑irradiation and post‑irradiation electrical characteristics, thermal resistance, switching test circuits, package dimensions, and contact information for International Rectifier.
| Drain-to-Source Breakdown Voltage (BVdss) | -100 V |
|---|---|
| On‑State Resistance (Rds(on)) | 0.30 V at Vgs = -12 V |
| Continuous Drain Current (Id) @ 25°C | 6.5 A |
| Continuous Drain Current (Id) @ 100°C | 4.1 A |
| Gate Threshold Voltage (Vgs(th)) | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | 45 nC |
| Package Type | LCC‑18 surface‑mount |
| Weight | 9 g (typical) |
| Operating Junction Temperature Range | -55 °C to 150 °C |
The MOSFET is supplied in an LCC‑18 surface‑mount package.
The gate threshold voltage ranges from -2.0 V to -4.0 V.