The document describes the features and characteristics of a radiation hardened power MOSFET product, including single event effect hardening, ultra low RDS(on), low total gate charge, proton tolerance, simple drive requirements, ease of paralleling, and good sealing.
The IRH7250SE is a radiation‑hardened, N‑channel power MOSFET designed for space and high‑radiation applications. It offers a low on‑state resistance and high current rating, making it suitable for DC‑DC converters, motor control and other switching power circuits.
Key electrical characteristics include a 200 V drain‑to‑source breakdown voltage, 26 A continuous drain current, 0.10 Ω RDS(on), and a single‑pulse avalanche energy of 500 mJ. The device is rated for 100 k rad (Si) total ionizing dose and operates from –55 °C to 150 °C, with a typical weight of 11.5 g.
| Radiation Level | 100K Rads (Si) |
|---|---|
| On‑State Resistance (RDS(on)) | 0.10 Ω |
| Breakdown Voltage (BVdss) | 200 V |
| Maximum Power Dissipation | 150 W |
| Gate‑Source Voltage (Vgs) | +20 V |
| Single Pulse Avalanche Energy | 500 mJ |
| Operating Junction Temperature Range | -55 to 150 °C |
| Weight | 11.5 g (Typical) |
Its on‑state resistance is 0.10 Ω (RDS(on)) measured at VGS = 12 V and ID = 16 A.
The MOSFET is qualified for a total ionizing dose of 100 k rad (Si).
The drain‑to‑source breakdown voltage (BVdss) is specified at 200 V.