MBR2030CTL is a dual Schottky power rectifier from ON Semiconductor. It has very low forward voltage drop, high junction temperature, high dv/dt capability, excellent ability to withstand reverse avalanche energy transients, low power loss/high efficiency, high surge capacity, 175°C operating junction temperature, 20 A total current (10 A per diode leg), etc.
The MBR2030CTL is a dual Schottky power rectifier designed for high efficiency power‑supply output rectification and ORing applications. It offers a very low forward voltage drop, high surge capacity, and operation up to 175 °C junction temperature.
The datasheet lists electrical, thermal, and mechanical characteristics, including maximum ratings, typical forward and reverse voltage curves, capacitance behavior, and package dimensions for the TO‑220AB case. Ordering information and contact details for ON Semiconductor technical support are also provided.
| Forward Voltage Drop (10 A, 150 °C) | 0.4 V |
|---|---|
| Peak Repetitive Reverse Voltage | 30 V |
| Nonrepetitive Peak Surge Current | 150 A |
| Average Forward Current (per device) | 20 A |
| Operating Junction Temperature Range | -65 °C to +175 °C |
| Thermal Resistance Junction‑to‑Case | 2.0 °C/W |
The device is rated for a peak repetitive reverse voltage of 30 V.
It can handle a nonrepetitive peak surge current of 150 A.
It operates from –65 °C to +175 °C junction temperature.
The forward voltage drop is 0.4 V at 10 A.