1N5820, 1N5821, 1N5822 These three models of Schottky diodes use the Schottky barrier principle in a large area of metal-to-silicon power diodes. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
The 1N5820, 1N5821 and 1N5822 are axial‑lead Schottky barrier rectifiers offered by ON Semiconductor. They feature low forward voltage, low stored charge and high efficiency, making them suitable for low‑voltage, high‑frequency inverter applications, free‑wheeling diodes and polarity protection.
The datasheet provides maximum ratings, electrical and thermal characteristics, recommended soldering conditions, and ordering information for various packaging options, including tape‑and‑reel and Pb‑free variants.
| Maximum Repetitive Reverse Voltage (VrRM) | 20 V (1N5820), 30 V (1N5821), 40 V (1N5822) |
|---|---|
| Average Rectified Forward Current | 3.0 A |
| Maximum Instantaneous Forward Voltage at 3 A | 0.475 V (1N5820), 0.500 V (1N5821), 0.525 V (1N5822) |
| Lead Soldering Temperature | 260 °C max for 10 s |
| Package Weight | 1.1 g |
The 1N5820 is rated for 20 V, the 1N5821 for 30 V, and the 1N5822 for 40 V reverse voltage.
The leads may be soldered up to 260 °C for a maximum of 10 seconds.
At 3 A the forward voltage is 0.475 V for 1N5820, 0.500 V for 1N5821 and 0.525 V for 1N5822.