The MBRD1035CTL is a large area metal-to-silicon power diode that employs the Schottky Barrier principle. It features a highly stable oxide passivated junction, guardring for stress protection, matched dual die construction, etc. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diode, and polarity protection diodes.
The MBRD1035CTL is a Schottky barrier power diode designed for low‑voltage, high‑frequency switching power supplies, free‑wheeling, and polarity‑protection applications. It features a highly stable oxide‑passivated junction, a guard‑ring for stress protection, and a matched dual‑die construction that can be paralleled for higher current output.
Key specifications include a maximum reverse voltage of 35 V, an average forward current of 10 A, and a typical forward voltage drop of about 0.47 V at 10 A. The device is supplied in a DPAK surface‑mount package with both standard and Pb‑free options, and detailed ordering information is provided in the datasheet. This manual is written in Chinese.
| Typical Forward Voltage Drop (VF) | 0.47 V at 10 A |
|---|---|
| Package Type | DPAK (Surface Mount) |
Typical forward voltage drop is about 0.47 V when the diode conducts 10 A.
It is supplied in a DPAK surface‑mount package, with both standard and Pb‑free options.