The document introduces the application circuit design of dual Schottky barrier diodes and the advantages of the new SOT-363 package solution. The product is suitable for low-power surface mount applications, with features such as extremely low minority carrier lifetime, very low capacitance, and low reverse leakage.
The document provides electrical characteristics, maximum ratings and mechanical data for three dual Schottky barrier diodes (MBD110DWT1G, MBD330DWT1G, MBD770DWT1G). These devices are offered in a compact SOT‑363 (SC‑88) package and are targeted at low‑power surface‑mount applications such as UHF/VHF detectors.
Key sections include features, reverse breakdown voltage, diode capacitance, reverse leakage, forward voltage, package dimensions and ordering information. Test notes describe how capacitance and noise figure were measured.
| Reverse Breakdown Voltage (MBD110DWT1G) | 7.0 V |
|---|---|
| Reverse Breakdown Voltage (MBD330DWT1G) | 30 V |
| Reverse Breakdown Voltage (MBD770DWT1G) | 70 V |
| Package Type | SC‑88 / SOT‑363 |
| Junction Temperature Range | -55 °C to +125 °C |
The MBD110DWT1G diode has a reverse breakdown voltage of 7.0 V.
The MBD330DWT1G diode is supplied in an SC‑88 / SOT‑363 (case 419B) package.
Yes, the devices are Pb‑Free, Halogen‑Free/BFR‑Free and RoHS compliant.