HIT1213 is a RENESAS silicon NPN epitaxial transistor with low frequency power amplifier characteristics, used in conjunction with HIT673.
The HIT1213 is a silicon NPN epitaxial transistor offered by Renesas. It is presented as a low‑frequency power amplifier and is available in a TO‑92 (1) package (PRSSO003DA‑A). The document lists its key features, outline, and ordering information.
The datasheet details absolute maximum ratings, electrical characteristics, and typical performance curves, including collector‑to‑base and collector‑to‑emitter breakdown voltages, current limits, power dissipation, and transfer ratios. Package dimensions and storage temperature ranges are also provided, along with legal notices regarding usage and liability.
| Collector‑to‑base voltage (V CBO) | 50 V |
|---|---|
| Collector‑to‑emitter voltage (V CEO) | 50 V |
| Emitter‑to‑base voltage (V EBO) | 5 V |
| Collector current (I C) | 0.5 A |
| Collector peak current (I C peak) | 1.0 A |
| Power dissipation (P D) | 0.4 W |
| Junction temperature (T J) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| DC current transfer ratio (h FE) | 60 – 320 |
| Base‑to‑emitter voltage (V BE on) | 1.2 V |
The maximum collector‑to‑base voltage is 50 V.
The device should be stored between –55 °C and +150 °C.
No, the product is designed for consumer use and not for automotive.