The MAX317/MAX318/MAX319 are precision, CMOS, monolithic analog switches. The single-pole single-throw (SPST) MAX317 is normally closed (NC), the SPST MAX318 is normally open (NO), and the single-pole double-throw (SPDT) MAX319 has one normally open and one normally closed switch. All three parts offer low on resistance (less than 35Ω), guaranteed to match within 2Ω between channels and to remain flat over the analog signal range (∆3Ω max). They also offer low leakage (less than 250pA at +25°C and less than 6nA at +85°C) and fast switching (turn-on time less than 175ns and turn-off time less than 145ns). The MAX317/MAX318/MAX319 are fabricated with Maxim’s new improved silicon-gate process. Design improvements guarantee extremely low charge injec- tion (10pC), low power consumption (35µW), and elec- trostatic discharge (ESD) greater than ±2000V. The 44V maximum breakdown voltage allows rail-to-rail ana- log signal handling capability.
The MAX317, MAX318 and MAX319 are monolithic analog switches offered in SPST (NC and NO) and SPDT configurations. They provide low on‑resistance (less than 35 Ω), tight matching between channels (<2 Ω), and flat resistance over the analog signal range. The devices feature low leakage currents (≤250 pA at +25 °C, ≤6 nA at +85 °C), fast switching (turn‑on <175 ns, turn‑off <145 ns), and robust ESD protection (>±2000 V).
These switches are fabricated with Maxim’s silicon‑gate process and support a wide supply range, operating from bipolar supplies of ±5 V to ±20 V or from single supplies of +10 V to +30 V. Pin configurations, electrical characteristics, and test circuits are detailed for design integration.
| On‑Resistance (RON) | < 35 Ω (typical 20 Ω) |
|---|---|
| On‑Resistance Matching | < 2 Ω between channels |
| Leakage Current (OFF) | < 250 pA at +25 °C, < 6 nA at +85 °C |
| ESD Rating | > ±2000 V |
| Breakdown Voltage | 44 V maximum |
| Charge Injection | < 10 pC |
| Turn‑On Time | < 175 ns |
| Turn‑Off Time | < 145 ns |
The typical on‑resistance is less than 20 Ω, with a maximum of 35 Ω.
Off‑state leakage is less than 250 pA at +25 °C and less than 6 nA at +85 °C.
The devices are rated for ESD protection greater than ±2000 V.