Siemens BUZ 101L Power Transistor Datasheet

BUZ 101L is an N-channel enhancement mode avalanche-rated logic level dv/dt rated low on-resistance power transistor, with a maximum operating temperature of 175 °C and a TO-220 AB package.


Siemens BUZ 101L Power Transistor Datasheet - cover page
Brand
Siemens
Category
Transistor
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
178 KB
Published
07 May, 2012
Updated
30 September, 2023
MD5 checksum
DFE5B9807ED0BA8BA89D27992AF466E3

About this manual

The BUZ 101L is an N‑channel, enhancement‑mode, avalanche‑rated power transistor with logic‑level gate drive. It is offered in a TO‑220AB package and is suitable for applications requiring low on‑resistance and high current capability.

The document lists maximum ratings such as a continuous drain current of 29 A, pulsed drain current of 116 A, and a power dissipation of 100 W at 25 °C. Electrical characteristics include a drain‑source breakdown voltage of 50 V, gate‑threshold voltage between 1.2 V and 2 V, and an on‑resistance ranging from 0.045 Ω to 0.06 Ω. Operating temperature spans –55 °C to 175 °C.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Static Characteristics
  • Dynamic Characteristics
  • Reverse Diode
  • Power Dissipation
  • Typical Output Characteristics
  • Typical Drain‑Source On‑Resistance
  • Typical Capacitances
  • Avalanche Energy

Specifications

Maximum continuous drain current (Id)29 A
Maximum pulsed drain current (Id,puls)116 A
Maximum power dissipation (Pd)100 W @ 25 °C

Frequently asked questions

What is the maximum continuous drain current of the BUZ 101L?

The BUZ 101L can handle a continuous drain current of 29 A.

What is the maximum power dissipation rating?

The device can dissipate up to 100 W at a case temperature of 25 °C.

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