BUZ 90A is an N-channel enhancement avalanche-rated silicon power transistor. The maximum continuous current is 4A and the maximum voltage is 600V. The on-resistance is 2 ohms.
This datasheet describes the Siemens BUZ90A SIPMOS N‑channel enhancement‑mode power transistor. It lists the device's maximum ratings, static and dynamic electrical characteristics, and package information for the TO‑220AB housing.
Key specifications include a continuous drain current of 4 A, pulsed drain current of 16 A, breakdown voltage of 600 V, and a power dissipation rating of 75 W at 25 °C. The document also provides avalanche ratings, gate‑source voltage limits, on‑resistance values, and detailed capacitance data.
| Gate‑source voltage (Vgs) | +20 V |
|---|---|
| Package type | TO‑220 AB |