2SK2969 is an N-Channel Silicon MOSFET produced by SANYO, it has low on resistance, ultrahigh-speed switching and 2.5V driving
The 2SK2969 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low on‑resistance and can be driven with a 2.5 V gate signal, making it suitable for high‑frequency power conversion circuits.
Key specifications include a 30 V drain‑to‑source rating, 0.8 A continuous drain current, 3.2 A pulsed current, and fast switching times (10 ns turn‑on delay, 30 ns turn‑off delay). The datasheet also provides capacitance values, gate charge data, and recommended test circuits for evaluating performance.
| Drain-to-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-to-Source Voltage (Vgs) | 10 V |
| Continuous Drain Current (Id) | 0.8 A |
| Pulsed Drain Current (Id,pulse) | 3.2 A |
| Input Capacitance (Ciss) | 90 pF |
| Output Capacitance (Coss) | 50 pF |
| Reverse Transfer Capacitance (Crss) | 20 pF |
| Turn‑ON Delay Time (t_on) | 10 ns |
| Rise Time (t_r) | 10 ns |
| Turn‑OFF Delay Time (t_off) | 30 ns |
| Total Gate Charge (Qg) | 6 nC |
The device is rated for a maximum drain‑to‑source voltage of 30 V.
The continuous drain current (DC) rating is 0.8 A.