This document describes the features and characteristics of PNP/NPN Silicon Epitaxial Planar Transistors produced by SANYO. These transistors are suitable for applications such as relay drivers, lamp drivers, motor drivers, and strobes. The product adopts MBIT processes and has high current capacitance, low collector-to-emitter saturation voltage, and high-speed switching. The ultrasmall-sized package allows for small and slim applied sets, and it has a high allowable power dissipation.
The SANYO CPH3110/3210 series are PNP/NPN silicon epitaxial planar transistors designed for high‑speed switching in relay, lamp, motor and strobe driver applications. The devices feature low collector‑to‑emitter saturation voltage, high current capability, and an ultra‑small 0.9 mm package.
Key specifications include collector‑to‑base voltage up to 40 V, collector current of 5 A, and a junction temperature rating of 150 °C. Absolute maximum ratings, electrical characteristics, and switching time test data are provided for design reference.
| Collector-to-Base Voltage (VcBo) | -30 V to 40 V |
|---|---|
| Collector-to-Emitter Voltage (VCEO) | -30 V |
| Collector Current (Ic) | 5 A |
| Base Current (IB) | 1.2 A |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to +150 °C |
The maximum collector current is 5 A.
The collector‑to‑emitter saturation voltage is about 0.71 V (typ).
The base‑to‑emitter saturation voltage is about 0.82 V (typ).
The turn‑on time is approximately 30 ns.