The DTC12-N is a silicon planar type, 12 A bidirectional thyristor offered in a TO‑220 package. The datasheet lists its key features, including peak OFF‑state voltage ranging from 200 V to 600 V and an RMS ON‑state current of 12 A.
Detailed electrical characteristics, absolute maximum ratings, thermal resistance, and recommended gate trigger circuits are provided, along with storage and operating temperature limits. A disclaimer notes that the device is not intended for safety‑critical applications such as aerospace or medical implants.
| Peak OFF‑State Voltage (Vprm) | 200 V – 600 V |
|---|---|
| RMS ON‑State Current | 12 A |
| Package | TO‑220 |
| Storage Temperature | -40 °C to +125 °C |
| Junction Temperature (Tj) | 125 °C |
| Weight | 1.8 g |
The device can withstand a peak OFF‑state voltage between 200 V and 600 V.
The maximum RMS ON‑state current is 12 A.
It is supplied in a TO‑220 package.
The component can be stored from –40 °C up to +125 °C.