This document describes the features and characteristics of the DBF60 Silicon Diffused Junction Type 6.0A Single-Phase Bridge Rectifier from SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters. It includes glass passivation for high reliability, plastic molded structure, peak reverse voltage, average rectified current, etc.
The DBF60 series bridge rectifier from SANYO provides a silicon‑diffused junction design for high reliability. It delivers an average rectified current of 6 A, with a peak reverse voltage of 200 V for the DBF60C version and 600 V for the DBF60G version. The device includes a glass passivation layer and a plastic molded package.
The component is supplied in a glass‑passivated, plastic‑molded package (dimensions 11 × 9 mm) and identified by ordering number EN2799A. It is intended for use in various electronic applications, with specified operating temperature ranges and thermal resistance values.
| Peak Reverse Voltage | 200 V (DBF60C) / 600 V (DBF60G) |
|---|---|
| Average Rectified Current | 6 A |
| Surge Forward Current | >120 A (50 Hz sine wave, 1 cycle) |
| Forward Voltage (typical) | 1.05 V at 2.5 A |
| Reverse Current | 10 pA (typical) |
| Thermal Resistance (Junction‑Ambient) | 26 °C/W (without fin) |
| Thermal Resistance (Junction‑Case) | 3.4 °C/W (with Al fin) |
The DBF60C version is rated for 200 V peak reverse voltage, while the DBF60G version is rated for 600 V.
It can withstand a surge forward current of more than 120 A for a single 50 Hz sine‑wave cycle.
The junction‑ambient thermal resistance is 26 °C/W without a fin, and the junction‑case thermal resistance is 3.4 °C/W with an aluminum fin.