This document is the manual for SANYO 2SA1785 / 2SC4645 products, which introduces the features and characteristics of the products.
The document describes the 2SA1785 (PNP) and 2SC4645 (NPN) triple‑diffused planar silicon transistors, intended for high‑voltage driver applications. It lists absolute maximum ratings, electrical characteristics, and recommended usage notes, and includes a disclaimer that the devices are not suitable for life‑support or aircraft control systems.
Key specifications such as voltage limits, current capabilities, gain‑bandwidth product, and thermal ratings are presented in tabular form. The datasheet also provides switching time parameters and storage temperature ranges, and notes that the information is subject to change without notice.
| Collector-to-Base Voltage (Vcbo) | 400 V |
|---|---|
| Collector-to-Emitter Voltage (VCEO) | 400 V |
| Emitter-to-Base Voltage (Vebo) | 5 V |
| Collector Continuous Current (Ic) | 1 A |
| Collector Dissipation (Po) | 1 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The collector‑to‑base and collector‑to‑emitter voltages are both rated at 400 V, and the emitter‑to‑base voltage is rated at 5 V.
They may be stored from –55 °C up to +150 °C.
No, the datasheet states they should not be used in applications where failure could cause serious physical or material damage, such as life‑support or aircraft control systems.