This document describes the features and characteristics of CPH6313 No.7017-1/4, including low ON-resistance, high-speed switching, and 2.5V drive.
This datasheet describes the SANYO CPH6313 P‑Channel Silicon MOSFET, including its key features, package dimensions, absolute maximum ratings, and detailed electrical characteristics. It is intended for designers who need high‑speed switching performance and low ON‑resistance in their circuits.
The document also contains safety notices, export control information, and a disclaimer that the data are for reference only and not guaranteed for volume production. Users are advised to verify performance in their specific applications and to incorporate protective circuitry where required.
| Drain-to-Source Voltage | -20 V |
|---|---|
| Gate-to-Source Voltage | +10 V |
| Drain Current (DC) | -4 A |
| Channel Temperature | 150 °C |
The maximum drain-to-source voltage is -20 V.