This data sheet provides information on the features, typical applications and parameters of the EFC4606
The SANYO EFC4606 is a general‑purpose N‑channel silicon MOSFET designed for switching applications such as Li‑ion battery charge and discharge. It features a low 2.5 V drive voltage, common‑drain configuration, and is suitable for use on ceramic substrates.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, capacitance values, switching times, and package dimensions, along with usage notes and legal disclaimer information for designers.
| Source-to-Source Voltage (Vsss) | 24 V |
|---|---|
| Gate-to-Source Voltage (Vass) | +12 V |
| Source Current (DC) (Is) | 6 A |
| Source Current (Pulse) (Isp) | 60 A |
| Total Dissipation (PT) | 1.6 W |
| Channel Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to +150 °C |
| Input Capacitance (Ciss) | 1050 pF |
| Output Capacitance (Coss) | 170 pF |
| Turn‑ON Delay Time (ta(on)) | 22 ns |
| Rise Time (tr) | 92 ns |
| Total Gate Charge (Qg) | 13 nC |
The device is rated for a maximum source‑to‑source voltage of 24 V.
A gate‑to‑source drive voltage of +12 V is specified.
It can handle a pulse source current of up to 60 A for 100 µs at 1 % duty cycle.