The IDT71V2576/78 are high-speed SRAMs organized as 128K x 36/256K x 18. They support high system speed and have features like self-timed write cycle, interleaved or linear burst mode selection. They operate at 3.3V core power supply and have 2.5V I/O voltage. They are available in multiple package options.
The IDT71V2576 and IDT71V2578 are high‑speed synchronous SRAMs designed for commercial and industrial applications. They provide 128 K × 36 (71V2576) or 256 K × 18 (71V2578) memory configurations, support burst‑mode operation, and feature pipelined outputs for fast data access.
These devices are supplied in JEDEC‑standard 100‑pin TQFP, 119‑lead BGA, and 165‑fine‑pitch BGA packages. They operate from a 3.3 V core supply with 2.5 V I/O, and are rated for commercial temperature ranges of 0 °C to +70 °C and industrial ranges of –40 °C to +85 °C.
| Memory configuration | 128K × 36 (71V2576) / 256K × 18 (71V2578) |
|---|---|
| Core supply voltage | 3.3 V |
| Access time (150 MHz) | 3.8 ns |
| Access time (133 MHz) | 4.2 ns |
| Industrial temperature range | -40 °C to +85 °C |
| Power dissipation | 2.0 W (typical) |
| Input capacitance | 5 pF (Vin = 3 dV) |
| Output capacitance | 7 pF (Vout = 3 dV) |
The IDT71V2576 provides 128 K × 36 bits of memory, while the IDT71V2578 provides 256 K × 18 bits.
They use a 3.3 V core supply voltage and a 2.5 V I/O voltage.