SGS-THOMSON STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORhandbook

Update: 30 September, 2023

STP20N10 is an N-channel enhancement mode power MOS transistor, with typical RDS(on) of 0.09 ohm, 100% avalanche tested, repetitive avalanche data at 100oC, low gate charge, high current capability, 175oC operating temperature and application oriented characterization.

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MD5 Checksum: 9818AED0D9669333F66360D0AB9C0379

Publication date: 07 May, 2012

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PDF Link: SGS-THOMSON STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORhandbook PDF

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