STP20N10 is an N-channel enhancement mode power MOS transistor, with typical RDS(on) of 0.09 ohm, 100% avalanche tested, repetitive avalanche data at 100oC, low gate charge, high current capability, 175oC operating temperature and application oriented characterization.
The STP20N10 is an N‑channel enhancement‑mode power MOSFET designed for high‑current, high‑speed switching applications such as solenoid and relay drivers, regulators, DC‑DC converters, motor control, audio amplifiers, and automotive systems. It is supplied in a TO‑220 package and is rated for 100 V drain‑source voltage.
Key specifications include a typical on‑resistance of 0.09 Ω, continuous drain current of 20 A at 25 °C (14 A at 100 °C), total power dissipation of 105 W at 25 °C, and a junction‑to‑ambient thermal resistance of 62.5 °C/W. The device operates up to 175 °C junction temperature and can be stored from –65 °C to 175 °C.
| Drain‑source voltage (VDS) max | 100 V |
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The STP20N10 is rated for a maximum drain‑source voltage of 100 V.