FJAF6920 is a NPN triple diffused planar silicon transistor produced by Fairchild Semiconductor Corporation. The maximum collector-emitter voltage of the transistor is 800 V, the maximum collector-emitter current is 20 A, and the maximum collector dissipation power is 60 W.
This datasheet describes the Fairchild FJAF6920 NPN triple‑diffused planar silicon transistor designed for high‑voltage color monitor applications. It lists absolute maximum ratings, electrical and thermal characteristics, and typical performance curves.
Key sections include absolute maximum ratings, detailed electrical parameters such as breakdown voltages and current limits, thermal resistance data, and mechanical package dimensions for the TO‑3PF case. Legal notices, trademark information, and product status definitions are also provided.
| Emitter‑Base Voltage (Vebo) | 6 V |
|---|---|
| Power Dissipation (Ptot) | 60 W |
| Storage Temperature | -55 °C to 150 °C |
The storage temperature range is –55 °C to 150 °C.