HAT2137H is a N-channel power MOSFET from RENESAS, which has the features of 7V gate drive, low drive current, high density mounting, and low on-resistance (RDS(on) = 3.8 mΩ)
The HAT2137H is a silicon N‑channel power MOSFET designed for high‑density mounting and low on‑resistance operation. It supports a 7 V gate drive, low drive current, and offers a typical on‑state resistance of 3.8 mΩ at Vgs = 10 V.
The document provides absolute maximum ratings, detailed electrical characteristics, thermal data, and mechanical dimensions for the LFPAK (PTZZO005DA‑A) package. Ordering information and safety notices are also included.
| Drain‑to‑source voltage (VDS) | 40 V |
|---|---|
| Gate‑to‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 45 A |
| Input capacitance (CISS) | 6200 pF |
| Output capacitance (COSS) | 780 pF |
| Storage temperature range | -55 °C to +150 °C |
| Package | LFPAK (PTZZO005DA‑A) |
The device can handle a continuous drain current of 45 A.
It is supplied in the LFPAK (PTZZO005DA‑A) package.
The gate‑source voltage must not exceed +20 V.