This document describes the features and characteristics of the 2SC5051 silicon NPN epitaxial transistor, including high gain bandwidth product, high gain, and low noise figure.
The 2SC5051 is a silicon NPN epitaxial transistor intended for VHF/UHF wide‑band amplifier applications. It offers a high gain‑bandwidth product of up to 11 GHz, high gain (PG ≈ 14.5 dB) and low noise figure (NF ≈ 1.1 dB) at 900 MHz.
The datasheet lists absolute maximum ratings, detailed electrical parameters, and the CMPAK® (PTSP0003ZA‑A) package dimensions. Ordering information and safety notices, including ESD sensitivity, are also included.
| Collector‑to‑Base Voltage (Vcbo) | 15 V |
|---|---|
| Collector‑to‑Emitter Voltage (Vceo) | 8 V |
| Emitter‑to‑Base Voltage (Vebo) | 1.5 V |
| Collector Current (Ic) | 50 mA |
| Power Dissipation (Pd) | 100 mW |
| Junction Temperature (Tj) | 150 °C |
| Gain‑Bandwidth Product (fT) | 11 GHz (typ) |
| Power Gain (PG) | 14.5 dB (typ at 900 MHz) |
| Noise Figure (NF) | 1.1 dB (typ at 900 MHz) |
| Package | CMPAK® (PTSP0003ZA‑A) |
The maximum collector current is 50 mA.
The device is very sensitive to electro‑static discharge, so appropriate ESD precautions should be taken when handling it.
It uses the CMPAK® package, identified by the code PTSP0003ZA‑A.
The ordering part number is 28C05051YZ‑TR‑E.