This document describes the features of MITSUBISHI Nch POWER MOSFET FS16KM-9 for high-speed switching use. It has a drain-source voltage of 450V, a drain-source resistance of 0.45Ω, and a drain current of 16A. The product is suitable for SMPS, DC-DC converters, battery chargers, power supplies for printers, copiers, HDDs, FDDs, TVs, VCRs, personal computers, etc.
The FS16KM-9 is a high‑speed switching N‑channel MOSFET designed for use in SMPS, DC‑DC converters, battery chargers, and power supplies for printers, copiers, HDDs, VCRs, and personal computers. It offers a 450 V drain‑source breakdown voltage and a continuous drain current of 16 A (48 A pulsed).
Key specifications include a typical on‑state resistance of 0.35 Ω, a maximum power dissipation of 40 W, and an operating temperature range from –55 °C to +150 °C. The device features an isolation voltage of 2000 V (terminal to case) and a low gate‑source leakage current, making it suitable for high‑reliability applications.
| Drain‑source voltage (VDS) | 450 V |
|---|---|
| Gate‑source voltage (VGS) | 30 V |
| Continuous drain current (Id) | 16 A |
| Pulsed drain current (Idm) | 48 A |
| Maximum power dissipation (Pd) | 40 W |
| Operating temperature range | -55 °C to +150 °C |
| Isolation voltage (terminal‑to‑case) | 2000 V |
| Input capacitance (Ciss) | 1700 pF |
| Output capacitance (Coss) | 230 pF |
| Weight | 2.0 g |
The maximum drain‑source voltage is 450 V.
It is suitable for SMPS, DC‑DC converters, battery chargers, and power supplies for printers, copiers, HDDs, VCRs, and personal computers.
The device can dissipate up to 40 W of power.