The 2SB1204 (PNP) and 2SD1804 (NPN) are high‑current switching silicon transistors designed for relay drivers, high‑speed inverters, converters, and other general high‑current applications. They feature low collector‑to‑emitter saturation voltage, high current capability, and a compact package.
Key specifications include a collector‑to‑emitter voltage rating of 50 V, a continuous collector current of 8 A (12 A pulsed), junction temperature up to 150 °C, and storage temperature range from –55 °C to +150 °C. The devices are supplied in a small, slim package with dimensions of approximately 2.3 mm × 2.0 mm.
| Collector‑to‑Emitter Voltage (VCEO) | 50 V |
|---|---|
| Collector Current (Ic) | 8 A |
| Pulse Collector Current (Icp) | 12 A |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
They are used in relay drivers, high‑speed inverters, converters, and other general high‑current switching applications.
The maximum continuous collector current is 8 A, with a pulsed rating of 12 A.